发明名称 |
Methods for fabricating semiconductor devices having local contacts |
摘要 |
Fabrication methods for semiconductor device structures are provided. One method for fabricating a semiconductor device structure that includes a gate structure overlying a semiconductor substrate and a doped region formed in the semiconductor substrate adjacent to the gate structure involves the steps of forming a first layer of dielectric material overlying the gate structure and the doped region, isotropically etching the first layer of dielectric material, forming a second layer of dielectric material overlying the first layer of dielectric material after isotropically etching the first layer, and forming a conductive contact that is electrically connected to the doped region within the first layer and the second layer.
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申请公布号 |
US8216928(B1) |
申请公布日期 |
2012.07.10 |
申请号 |
US201113014561 |
申请日期 |
2011.01.26 |
申请人 |
RICHTER RALF;HUISINGA TORSTEN;HEINRICH JENS;GLOBALFOUNDRIES, INC. |
发明人 |
RICHTER RALF;HUISINGA TORSTEN;HEINRICH JENS |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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