发明名称 |
Film formation method and apparatus |
摘要 |
A film formation method includes setting a target object at a temperature of 150 to 550° C., the target object being placed inside the process container configured to hold a vacuum state therein, and then, repeating a cycle alternately including a first supply step and a second supply step a plurality of times to form a silicon nitride film on the target object. The first supply step is a step of supplying monochlorosilane gas as an Si source into the process container while setting the process container at a pressure of 66.65 to 666.5 Pa therein. The second supply step is a step of supplying a nitrogen-containing gas as a nitriding gas into the process container. |
申请公布号 |
US8216648(B2) |
申请公布日期 |
2012.07.10 |
申请号 |
US20100954778 |
申请日期 |
2010.11.26 |
申请人 |
MATSUNAGA MASANOBU;SUZUKI KEISUKE;JANG JAEHYUK;CHOU PAO-HWA;YONEZAWA MASATO;HASEGAWA MASAYUKI;HASEBE KAZUHIDE;TOKYO ELECTRON LIMITED |
发明人 |
MATSUNAGA MASANOBU;SUZUKI KEISUKE;JANG JAEHYUK;CHOU PAO-HWA;YONEZAWA MASATO;HASEGAWA MASAYUKI;HASEBE KAZUHIDE |
分类号 |
C23C16/34 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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