| 摘要 |
PURPOSE: A thin film transistor array substrate and a manufacturing method thereof are provided to prevent a wavy noise by minimizing light leakage. CONSTITUTION: A gate electrode(321) and a gate line are formed on a substrate(310). A gate insulating film(315a) is formed on the substrate. An island type active layer(324) has a width narrower than the width of the gate electrode. The active layer is formed on the gate electrode. A source electrode(322) and a drain electrode(323) are formed on the active layer. A data line is formed on the substrate. A passivation film(315b) is formed on the substrate. A pixel electrode(318) is formed on the passivation film. |
