| 摘要 |
PURPOSE: A program method of a semiconductor memory device is provided to shorten program operation time by omitting a verification operation about a high verification level among various verification levels in an initial ISPP type program operation. CONSTITUTION: A program operation is performed using a blind verification operation to make the threshold voltages of the selected memory cells reach a first verification level(PV1). If one or more cell reaching the first verification level are detected, it is verified whether a cell reaching a second verification level(PV2) higher than the first verification level exists. If the cell reaching the second verification level exists, the program operation of the cells with the first verification level and the second verification level as a target level is continuously performed. If the cell reaching the second verification level dose not exist, the program operation of the cell with a higher target level than the first verification level is performed after the program of the cells with the first verification level as the target level is completed.
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