| 摘要 |
A device for carrying out a plasma enhanced process includes, within a vacuum chamber, at least one magnetron electrode ( 32 ) constituting an unbalanced magnetron having a flat magnetron face ( 20 ) with peripheral and central magnetic poles of opposite polarities connected to a source ( 34 ) of alternating voltage. The device further includes a device for positioning a substrate ( 25 ), the substrate having a surface to be treated facing the magnetron face ( 20 ), and a gas supply device for supplying a process gas or process gas mixture to the space between the magnetron face ( 20 ) and the treated surface. The distance between the magnetron face ( 20 ) and the treated surface is adapted to the magnetic field created by the magnetron electrode ( 32 ) such that there is a visible plasma band running between darker tunnels formed by magnetic field lines extending between peripheral and central magnetic poles of the magnetron face ( 20 ) and the treated surface, the plasma band having a minimum width but having homogeneous brightness towards the treated surface. |
