发明名称 |
Semiconductor inter-field dose correction |
摘要 |
A method and apparatus are provided for adapting a semiconductor inter-field dose correction map from a first photolithography mask to a second photolithography mask using the same manufacturing stack and reactive ion etching processes, the method including: obtaining a first dose correction map for the first photolithography mask as a function of first chip or die identities; determining a first transformation matrix from the first chip or die identities of the first photolithography mask into an orthogonal coordinate system; determining a second transformation matrix from second chip or die identities of the second photolithography mask into the orthogonal coordinate system; and transforming the first dose correction map for the first photolithography mask into a second dose correction map for the second photolithography mask in correspondence with each of the first and second transformation matrices.
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申请公布号 |
US8219938(B2) |
申请公布日期 |
2012.07.10 |
申请号 |
US20090580347 |
申请日期 |
2009.10.16 |
申请人 |
LEE HYUNG-RAE;YU DONG HEE;TSOU LEN Y.;ZHUANG HAOREN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE HYUNG-RAE;YU DONG HEE;TSOU LEN Y.;ZHUANG HAOREN |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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地址 |
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