Plasma etching method, plasma etching apparatus, control program and computer-readable storage medium

摘要

A plasma etching method etches an organic film formed on a target substrate by using a plasma of a processing gas via a silicon-containing mask. The processing gas is a gaseous mixture of an oxygen-containing gas, a rare gas and a carbon fluoride gas. A computer-executable control program controls a plasma etching apparatus to perform the plasma etching method. A computer-readable storage medium stores therein a computer-executable control program.