发明名称 |
Copper anode or phosphorous-containing copper anode, method of electroplating copper on semiconductor wafer, and semiconductor wafer with low particle adhesion |
摘要 |
Provided is a copper anode or a phosphorous-containing copper anode for use in performing electroplating copper on a semiconductor wafer, wherein purity of the copper anode or the phosphorous-containing copper anode excluding phosphorous is 99.99 wt % or higher, and silicon as an impurity is 10 wtppm or less. Additionally provided is an electroplating copper method capable of effectively preventing the adhesion of particles on a plating object, particularly onto a semiconductor wafer during electroplating copper, a phosphorous-containing copper anode for use in such electroplating copper, and a semiconductor wafer comprising a copper layer with low particle adhesion formed by the foregoing copper electroplating. |
申请公布号 |
US8216438(B2) |
申请公布日期 |
2012.07.10 |
申请号 |
US20080524623 |
申请日期 |
2008.10.06 |
申请人 |
AIBA AKIHIRO;TAKAHASHI HIROFUMI;JX NIPPON MINING & METALS CORPORATION |
发明人 |
AIBA AKIHIRO;TAKAHASHI HIROFUMI |
分类号 |
C25B11/04 |
主分类号 |
C25B11/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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