| 摘要 |
A method and system for performing chemical vapor deposition are disclosed. A chemical vapor deposition reactor can have a generally rectangular chamber that is configured for cross flow and/or zone flow control of reactant gases therethrough. One reactant gas can be injected into the chamber from one end thereof to create cross flow. Another reactant gas can be injected through the top of the chamber. Inert gas can be injected into the chamber to enhance flow control. By providing cross flow and zone flow control, more uniform deposition can be obtained. Also, parameters such as gas flows are less coupled to one another and can therefore be more easily controlled. |
