GAN SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A GaN(Nitride Gallium) substrate and a manufacturing method thereof are provided to control bending by injecting a lattice constant control material if a nitride gallium film, which is grown up on both sides, is bent. CONSTITUTION: A GaN(Nitride Gallium) film is simultaneously grown up on both top and down sides of a base substrate(S210). It is checked whether the bending degree of the GaN film is over a critical value in real-time(S220). A lattice constant control material is injected into the GaN film having bending(S230). The critical value is a numerical value causing a crack on either the base substrate or the GaN film.