| 摘要 |
The invention provides an antistatic gallium nitride based light emitting device and a method for fabricating the same. The method includes: growing an n-type GaN-based epitaxial layer, an active layer, a p-type GaN-based epitaxial layer and an undoped GaN-based epitaxial layer sequentially on a substrate; etching to remove parts of the layers above, to expose a part of the n-type GaN-based epitaxial layer, with the unetched part defined as an emitting area; etching to remove a part of the undoped GaN-based epitaxial layer; forming an ohmic contact electrode on an exposed part of p-type GaN-based epitaxial layer, and forming a Schottky contact electrode on another part; forming a p-electrode on a transparent conducting layer such that the p-electrode is electrically connected with the ohmic contact electrode; forming an n-electrode on the exposed n-type GaN-based epitaxial layer; and forming a connecting conductor on an insulation layer such that the connecting conductor is electrically connected with the n-electrode and the Schottky contact electrode. By forming a GaN Schottky diode directly on a p-type GaN-based epitaxial layer, the fabrication process is simplified while providing antistatic ability at the same time, and the emitting area is made the maximum use of so as to avoid the drop in the luminous efficiency of the GaN-based LED. |
