| 摘要 |
<p>PURPOSE: A photoresist film developing solution and a method for forming the photoresist film patterns of a semiconductor device using the same are provided to uniform the concentration of the developing solution in regions with differently exposed areas. CONSTITUTION: A photoresist film developing solution develops a photoresist film(130) with a first region with an exposed area and a second region with differently exposed area from the first region. The developing solution includes the buffer solution of a material which reacts with hydrogen ions at the exposed part of the photoresist film and eliminates the hydrogen ions. The buffer solution includes a material which reacts with hydrogen ions and generates salts. The buffer solution includes at least one of F-, Cl-, Br-, I-, and CH_3COO-. The buffer solution is a (N(CH_3)_4)+X- solution, and X includes at least one of F, Cl, Br, I, and CH_3COO.</p> |
