SUBSTRATE PROCESSING METHOD OF DEVICE HAVING ESC

摘要

PURPOSE: A method for processing a substrate in equipment having an electrostatic chuck is provided to prevent cross-talk by appropriately controlling a chucking voltage applied to an electrostatic chuck according to a processing state. CONSTITUTION: A chamber(10) includes an upper electrode(12) and a bottom electrode(17) to generate plasma for substrate surface treatment. The bottom electrode is formed on a substrate mounting table(15). An electrostatic chuck(16) fixes a substrate by generating static electricity. An RF power applying device applies RF power in order to generate the plasma between the bottom electrode and the upper electrode. A bias voltage applying device applies a bias voltage to the substrate in a substrate processing process in order for ion to be accelerated. A chucking voltage applying device applies a chucking voltage.