| 摘要 |
PURPOSE: A substrate processing apparatus and a substrate processing method using the inductively coupled plasma are provided to easily supply RF power to the inside of a chamber by applying a thin dielectric plate. CONSTITUTION: A chamber(110) includes a substrate support(114) for supporting a substrate(S). A vacuum device is composed of a suction hole(116) and a vacuum pump(118) to form an internal space in the chamber to be in a vacuum state. A gate valve allows a processed object including a substrate to be stored in the internal space of the chamber on one side of the chamber. A dielectric substrate seals the internal space of the chamber. The dielectric substrate can be composed of a ceramic material. The dielectric substrate is combined with an upper support(112) of the chamber in a sealed state to form a vacuum inside the chamber. |
