发明名称 |
Apparatus for growing high quality silicon single crystal ingot and growing method using the same |
摘要 |
The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.
|
申请公布号 |
US8216372(B2) |
申请公布日期 |
2012.07.10 |
申请号 |
US20060352917 |
申请日期 |
2006.02.13 |
申请人 |
CHO HYON-JONG;SILTRON INC. |
发明人 |
CHO HYON-JONG |
分类号 |
C30B35/00 |
主分类号 |
C30B35/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|