| 摘要 |
According to one embodiment, a power semiconductor device includes an IGBT region, first and second electrodes, and a first conductivity-type second semiconductor layer. The region functions as an IGBT element. The first electrode is formed in a surface of a second conductivity-type collector layer opposite to a first conductivity-type first semiconductor layer in the region. The second electrode is connected onto a first conductivity-type emitter layer and a second conductivity-type base layer in a surface of the first conductivity-type base layer and insulated from a gate electrode in the region. The first conductivity-type second semiconductor layer extends from the surface of the first conductivity-type base layer to the first conductivity-type first semiconductor layer around the IGBT region, and connected to the first electrode. |
