发明名称 DEPOSITION METHOD OF ZINCOXIDE TO SILICON NANOWIRE VERTICAL SORTING AND PHOTODIODE
摘要 PURPOSE: A method for depositing zinc oxide on a silicon nano line arranged perpendicularity and a photo diode are provided to prevent the deformation of a substrate by depositing a thin film in a relatively low temperature process. CONSTITUTION: A zinc compound is adsorbed on a silicon nano line by supplying a zinc source to a deposition reactor. A non-reactive zinc source and a reaction by-product are removed. An oxygen source and a nitrogen source are supplied to the reactor and an oxygen-containing chemical species is adsorbed on the silicon nano line on which a zinc-comprising chemical species is adsorbed and doped by nitrogen. A non-reactive oxygen source or nitrogen source is removed and the reaction by-product is removed.
申请公布号 KR20120077789(A) 申请公布日期 2012.07.10
申请号 KR20100139871 申请日期 2010.12.31
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY 发明人 KIM, HYUNG JUN;KANG, HYE MIN;KIM, DO YOUNG
分类号 H01L33/28 主分类号 H01L33/28
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