DEPOSITION METHOD OF ZINCOXIDE TO SILICON NANOWIRE VERTICAL SORTING AND PHOTODIODE
摘要
PURPOSE: A method for depositing zinc oxide on a silicon nano line arranged perpendicularity and a photo diode are provided to prevent the deformation of a substrate by depositing a thin film in a relatively low temperature process. CONSTITUTION: A zinc compound is adsorbed on a silicon nano line by supplying a zinc source to a deposition reactor. A non-reactive zinc source and a reaction by-product are removed. An oxygen source and a nitrogen source are supplied to the reactor and an oxygen-containing chemical species is adsorbed on the silicon nano line on which a zinc-comprising chemical species is adsorbed and doped by nitrogen. A non-reactive oxygen source or nitrogen source is removed and the reaction by-product is removed.
申请公布号
KR20120077789(A)
申请公布日期
2012.07.10
申请号
KR20100139871
申请日期
2010.12.31
申请人
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY