| 摘要 |
PURPOSE: A semiconductor device is provided to reduce dispersion of electric potential difference between floating zones by the addition of capacity through a capacity forming unit. CONSTITUTION: A substrate(1) comprises a semiconductor material layer(10) and an insulating layer(20). The insulating layer is formed on the semiconductor material layer. A plurality of areas is an island area which is insulated and separated on an SOI wafer. A plurality of floating zones comprises a first floating zone and a second floating zone. The first floating zone is closely located from the island area having a predetermined electric potential. The second floating zone is relatively located far from the island area having the predetermined electric potential than the first floating zone.
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