A nonvolatile memory device using charge traps formed in HfO2 by Nb ion doping and a Manufacturing method thereof,申请号KR20100068799-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	A nonvolatile memory device using charge traps formed in HfO2 by Nb ion doping and a Manufacturing method thereof
摘要
申请公布号	KR101163720(B1)	申请公布日期	2012.07.09
申请号	KR20100068799	申请日期	2010.07.16
申请人		发明人
分类号	H01L27/115;H01L21/8247	主分类号	H01L27/115
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Electrical system

Electric circuit interrupter

Asbestos fiber electrical insulating member impregnated with methyl hydrogen polysiloxane

Laminated table top with edging

Power take-off shaft and bearing for high speed motors

Low power condition responsive control apparatus

Regain control method and apparatus

Apparatus for manually bulk loading cans into freight cars and other compartments

New intermediates of the anthraquinone series

Solvent extraction process

Connection facilitating vehicle draft means

Reversed spring suspension for vehicle bodies

Machine for separating stones, potatoes, and vines

Nozzle and associated devices for fueling and defueling tanks

Means for directing water in the cylinder head of an internal combustion engine

Hydraulic ram and control therefor

Blind stitching attachment for sewing machines