| 摘要 |
PURPOSE: A semiconductor device is provided to prevent a PID(Plasma Injection Damage) phenomenon while maintaining the area of a device by forming a diode on a cross-area of power lines. CONSTITUTION: A first cell array(310) comprises a plurality of first metal lines(M2M1_0, M2M1_1, M2M1_2). A second cell array(320) comprises a plurality of second metal lines(M2M2_0, M2M2_1, M2M2_2). A plurality of first power lines(M2P1_0, M2P1_1, M2P1_2) is formed in a first direction. A plurality of second power lines(P2_0, P2_1, P2_2) is arranged on a layer lower than the plurality of first power lines at the cross area with the plurality of first power lines. A discharge unit(340) discharges electric charges of one or more lines among the plurality of second power lines.
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