GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DIODE,申请号KR20100067904-传众专利搜索

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发明名称	GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DIODE
摘要
申请公布号	KR101163900(B1)	申请公布日期	2012.07.09
申请号	KR20100067904	申请日期	2010.07.14
申请人		发明人
分类号	H01S5/20;H01S5/323;H01S5/343	主分类号	H01S5/20
代理机构		代理人
主权项
地址

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