| 摘要 |
PURPOSE: An apparatus of processing a baffle and a substrate and a processing method thereof are provided to improve process uniformity for processing a substrate by changing the flow of plasma according to uniformity in a plasma processing rate of the substrate. CONSTITUTION: A processing chamber(100) processes a substrate by using plasma. A plasma generator(200) generates the plasma used for processing the substrate. The plasma generator is combined with the processing chamber. The plasma generator comprises a reactor(210), a gas injection port(220), a plasma source(230), and an induction member. The processing chamber comprises a processing chamber(120), a substrate support member(140), a lead(160), and a baffle(180). The baffle uniformly sprays the plasma provided to the processing chamber from the plasma generator onto the substrate. |
