发明名称 INTERNAL VOLTAGE GENEATION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE: An internal voltage generation circuit and semiconductor integrated circuit are provided to decrease the number of control signals through controlling inner voltage driving by grouping a plurality of banks. CONSTITUTION: A first inner voltage generate circuit(1) supplies a first inner voltage to a first bank group composed of a first through fourth banks. A second inner voltage generate circuit(2) supplies a second inner voltage to a second bank group composed of a fifth through eighth banks. A third inner voltage generate circuit(3) supplies a third inner voltage to a third bank group composed of a ninth through twelfth banks. A fourth inner voltage generate circuit(4) supplies a fourth inner voltage to a fourth bank group composed of a thirteenth through sixteenth banks.
申请公布号 KR20120076434(A) 申请公布日期 2012.07.09
申请号 KR20100137922 申请日期 2010.12.29
申请人 SK HYNIX INC. 发明人 LIM, HEE JOON
分类号 G05F3/02 主分类号 G05F3/02
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