NITRIDE SEMICONDUCTOR DEVICE HAVING FLOATED GATE ELECTRODE AND METHOD FOR MANUFACTURING THEREOF

摘要

PURPOSE: A method for manufacturing a nitride based semiconductor device including a floated gate electrode is provided to improve operation speed of a nitride based semiconductor device by reducing parasitic capacitance due to high dielectric constant of a protective layer. CONSTITUTION: An epilayer(20,30,40) is formed on a base substrate(10). A source electrode(61) and a drain electrode(63) are formed on the epilayer at regular intervals. A protective layer(70) is formed for covering the epilayer. A gate contact hole(76) is formed between the source electrode and the drain electrode. The gate electrode(65) includes an electrode unit floated on a connection unit and the protective layer.