| 摘要 |
An externally connecting electrode is formed above a semiconductor substrate with interlayer insulation films and disposed in the externally connecting electrode. The externally connecting electrode has a pad metal layer whose upper surface is exposed, a first metal layer formed between the pad metal layer and the semiconductor substrate, and at least two first vias which penetrate the interlayer insulation film and electrically connect the pad metal layer to the first metal layer and are formed in the interlayer insulation film. The maximum interval b between the first vias is larger than the width a of the pad metal layer.
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