发明名称 THERMO PROGRAMMABLE RESISTOR BASED ROM
摘要 An integrated circuit is formed having an array of memory cells located in the dielectric stack above a semiconductor substrate. Each memory cell has an adjustable resistor and a heating element. A dielectric material separates the heating element from the adjustable resistor. The heating element alters the resistance of the resistor by applying heat thereto. The magnitude of the resistance of the adjustable resistor represents the value of data stored in the memory cell.
申请公布号 US2012170352(A1) 申请公布日期 2012.07.05
申请号 US20100981379 申请日期 2010.12.29
申请人 LE NEEL OLIVIER;JIMENEZ JEAN;STMICROELECTRONICS PTE LTD. 发明人 LE NEEL OLIVIER;JIMENEZ JEAN
分类号 G11C11/00;H01L21/02;H01L45/00 主分类号 G11C11/00
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