发明名称 |
METHODS OF FORMING SEMICONDUCTOR TRENCH AND FORMING DUAL TRENCHES, AND STRUCTURE FOR ISOLATING DEVICES |
摘要 |
Methods of forming a semiconductor trench and forming dual trenches and a structure for isolating devices are provided. The structure for isolating devices is disposed in a substrate having a periphery area and an array area. The structure for isolating devices includes a first isolation structure and a second isolation structure. The first isolation structure has a profile with at least three steps and is disposed in the substrate in the periphery area. The second isolation structure has a profile with at least two steps and is disposed in the substrate in the array area. |
申请公布号 |
US2012168897(A1) |
申请公布日期 |
2012.07.05 |
申请号 |
US20100981905 |
申请日期 |
2010.12.30 |
申请人 |
MA CHU-MING;WU TIN-WEI;YANG CHIH-HSIANG;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
MA CHU-MING;WU TIN-WEI;YANG CHIH-HSIANG |
分类号 |
H01L23/58;H01L21/76 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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