发明名称 METHODS OF FORMING SEMICONDUCTOR TRENCH AND FORMING DUAL TRENCHES, AND STRUCTURE FOR ISOLATING DEVICES
摘要 Methods of forming a semiconductor trench and forming dual trenches and a structure for isolating devices are provided. The structure for isolating devices is disposed in a substrate having a periphery area and an array area. The structure for isolating devices includes a first isolation structure and a second isolation structure. The first isolation structure has a profile with at least three steps and is disposed in the substrate in the periphery area. The second isolation structure has a profile with at least two steps and is disposed in the substrate in the array area.
申请公布号 US2012168897(A1) 申请公布日期 2012.07.05
申请号 US20100981905 申请日期 2010.12.30
申请人 MA CHU-MING;WU TIN-WEI;YANG CHIH-HSIANG;MACRONIX INTERNATIONAL CO., LTD. 发明人 MA CHU-MING;WU TIN-WEI;YANG CHIH-HSIANG
分类号 H01L23/58;H01L21/76 主分类号 H01L23/58
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