| 摘要 |
A semiconductor device, includes a substrate, an element isolating film formed in the substrate, a first element formation region isolated by the element isolating film, a second element formation region positioned adjacent to the first element formation region and isolated by the element isolating film, a first well of a second conductive type formed in a whole area of the first element formation region, a first transistor of a first conductive type formed on the first element formation region, a second transistor of the first conductive type which is formed on the first element formation region and whose threshold voltage is the same as a threshold voltage of the first transistor, a second well of the second conductive type formed in a whole area of the second element formation region, and a third transistor of the first conductive type formed on the second element formation region. |
