<p>The present invention provides a plasma CVD (Chemical Vapor Deposition) device with which it is possible to control film properties and control substrate temperature during film formation. A process chamber (21) according to one embodiment of the present invention is provided with: a holder (1) for holding a substrate; a magnetic field formation means (29) for generating a magnetic field within the process chamber; a shield (28) for reducing the accumulation of film on the magnetic field formation means; a heat dissipation sheet (32) for reducing heating of the magnetic field formation means; and a movement means (33) for moving the magnetic field formation means (29). The magnetic field formation means is characterized by moving in a direction that increases and decreases the volume between the magnetic field formation means and the holder. This configuration changes the distribution of plasma density within the process chamber, and specifically in the vicinity of the substrate, and as a result, it is possible to change the speed of film formation or the substrate temperature without changing other conditions such as voltage.</p>
