| 摘要 |
<p>A semiconductor device provided with conduction vias on a semiconductor substrate is produced wherein the complexity of the production process thereof is reduced. A transistor (20) formed on the semiconductor substrate (2) is covered with an insulating film (4), and a conduction via (5), which extends to the transistor (20) through the insulation film (4), and a conduction via (6), which extends into the semiconductor substrate (2) through the insulation film (4), are formed. After forming the conduction vias (5,6), an insulation film is further formed on the insulation film (4), and a conduction unit (30a), which is connected to the conduction via (5) that extends to the transistor (20), and a conduction unit (30a), which is connected to the conduction via (6) that extends into the semiconductor substrate (2), are formed, forming a multilayered wiring (30).</p> |
