| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an atmospheric pressure plasma etching apparatus capable of etching a workpiece well, and to combine manufacturing cost reduction of an SOI substrate and suppression of peeling. <P>SOLUTION: The atmospheric pressure plasma etching apparatus is provided with state detection means for detecting the state of a workpiece, and operation of the atmospheric pressure plasma etching apparatus is controlled according to the information detected by the state detection means. Etching can thereby be performed while detecting the state of the workpiece. Consequently, the workpiece can be etched well. When an SOI substrate is manufactured using the atmospheric pressure plasma etching apparatus, manufacturing cost reduction of the SOI substrate and suppression of peeling can be combined. <P>COPYRIGHT: (C)2012,JPO&INPIT |
