| 发明名称 |
GaN SUBSTRATE, MANUFACTURING METHOD OF THE SAME, NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN substrate which achieves planarization of a surface, a manufacturing method of the same, a nitride semiconductor element and a manufacturing method of the same. <P>SOLUTION: A GaN substrate 28 according to the present invention comprises a substrate 14 of GaN monocrystal, an intermediate layer 24 of AlGaN(0<x≤1) formed on the substrate 14 by epitaxial growth, and an upper layer 26 of GaN formed on the intermediate layer 24 by epitaxial growth. The intermediate layer 24 is formed of AlGaN which grows on the whole region of a principal surface 14a including a region to which contaminants adhere. Accordingly, the intermediate layer 24 normally grows on the substrate 14 and a growth face 24a of the intermediate layer 24 is flat. Because the growth face 24a of the intermediate layer 24 is flat, a growth face 26a of the upper layer 26 formed on the intermediate layer 24 by epitaxial growth is flat. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012129554(A) |
申请公布日期 |
2012.07.05 |
| 申请号 |
JP20120062624 |
申请日期 |
2012.03.19 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
AKITA KATSUSHI;TAKASUKA EIRYO;NAKAYAMA MASAHIRO;UENO MASANORI;MIURA KOHEI;KYONO TAKASHI |
| 分类号 |
H01L21/205;C23C16/34;H01L33/06;H01L33/32 |
主分类号 |
H01L21/205 |
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