发明名称 Method for Patterning Using Phase-Change Material
摘要 A patterned layer over a wafer is produced by depositing a print-patterned mask structure. Energized particles of a target material are deposited over the wafer and the print-patterned mask such that particles of said target material incident on the mask structure enter the mask structure body and minimally accumulate, if at all, on the surface of the mask structure, and otherwise the particles of target material accumulate as a generally uniform layer over the wafer. The print-patterned mask structure, including particles of target material therein, is removed leaving the generally uniform layer of target material as a patterned layer over the wafer.
申请公布号 US2012169820(A1) 申请公布日期 2012.07.05
申请号 US201213419351 申请日期 2012.03.13
申请人 LIMB SCOTT;SRINIVASAN UMA;PALO ALTO RESEARCH CENTER INCORPORATED 发明人 LIMB SCOTT;SRINIVASAN UMA
分类号 B41J2/00 主分类号 B41J2/00
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