METHOD FOR PREPARING SEMICONDUCTOR SUBSTRATE WITH INSULATING BURIED LAYER BY GETTERING PROCESS

摘要

A method for preparing semiconductor substrate with an insulating buried layer by gettering process, includes the following steps: providing a component substrate and a supporting substrate (S10); forming an insulation buried layer on a surface of the component substrate (S11); performing heat treating to the component substrate so as to form a clear region on the surface of the component substrate (S12); bonding the component substrate with the insulating layer and the supporting substrate together through the insulation layer to make the insulating layer clipped between the component substrate and the supporting substrate (S13); performing annealing reinforcement to a bonding interface to make the fastness degree of the bonding interface satisfy the needs of the subsequent chamfering grinding, reducing the thickness and polishing process (S14); performing chamfering grinding, reducing the thickness and polishing to the bonded component substrate (S15); performing additional annealing reinforcement to the boned interface (S16).