发明名称 |
METHOD FOR LOCAL HIGH-DOPING AND CONTACTING OF A SEMICONDUCTOR STRUCTURE WHICH COMPRISES A SOLAR CELL OR A PRECURSOR OF A SOLAR CELL |
摘要 |
The invention relates to a method for local high-doping and contacting of a semiconductor structure which is a solar cell or a precursor of a solar cell and has a silicon semiconductor substrate (1) of a base doping type. The high-doping and contacting is effected by producing a plurality of local high-doping regions of the base doping type in the semiconductor substrate (1) on a contacting side (1a) of the semiconductor substrate and applying a metal contacting layer (7) to the contacting side (1a) or, if applicable, one or more intermediate layers wholly or partially covering the contacting side (1a), to form electrically conductive connections between the metal contacting layer (7) and the semiconductor substrate (1) at the high doping regions. |
申请公布号 |
WO2011091959(A3) |
申请公布日期 |
2012.07.05 |
申请号 |
WO2011EP00180 |
申请日期 |
2011.01.18 |
申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.;ALBERT-LUDWIGS-UNIVERSITAET FREIBURG;SUWITO, DOMINIK;BENICK, JAN;JAEGER, ULRICH |
发明人 |
SUWITO, DOMINIK;BENICK, JAN;JAEGER, ULRICH |
分类号 |
H01L31/0216;H01L21/268;H01L31/0224;H01L31/061;H01L31/18 |
主分类号 |
H01L31/0216 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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