| 摘要 |
A transistor includes a source terminal and a drain terminal, an active layer including an oxide containing In, a gate electrode, and a gate insulating layer between the gate electrode and the active layer. At least a part of the active layer is amorphous, and an electric current flowing between the source terminal and the drain terminal of the transistor is less than 10 μA when the transistor is in an off state. In addition, the gate insulating layer contains hydrogen in an amount of less than 3×1021 atoms/cm3. |
