Vertical-channel junction field-effect transistors having buried gates and methods of making,申请号AU20050335231-传众专利搜索

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发明名称	Vertical-channel junction field-effect transistors having buried gates and methods of making
摘要
申请公布号	AU2005335231(B2)	申请公布日期	2012.07.05
申请号	AU20050335231	申请日期	2005.11.16
申请人	MISSISSIPPI STATE UNIVERSITY;SS SC IP, LLC	发明人	CHENG, LIN;MAZZOLA, MICHAEL S.
分类号	H01L29/74;H01L29/80;H01L31/111;H01L31/112	主分类号	H01L29/74
代理机构		代理人
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