| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor storage apparatus which inhibits deterioration in a via contact between an upper electrode and a second bit line. <P>SOLUTION: A semiconductor storage apparatus comprises a plurality of magnetic tunnel junction elements disposed on a semiconductor substrate and a plurality of selection transistors electrically connected to one ends of the plurality of magnetic tunnel junction elements, respectively. A first bit line is connected to one end of each magnetic tunnel junction element via one or a plurality of selection transistors. A plurality of upper electrodes are connected to other ends of the plurality of magnetic tunnel junction elements. A second bit line is connected to the other end of each magnetic tunnel junction element via the upper electrode. The upper electrodes stretch along the second bit line and are connected in common to the other end of each of the plurality of magnetic tunnel junction elements arranged in the stretching direction of the second bit line. <P>COPYRIGHT: (C)2012,JPO&INPIT |
