METHODS OF FORMING SINGLE CRYSTAL SILICON STRUCTURES AND SEMICONDUCTOR DEVICE STRUCTURES INCLUDING SINGLE CRYSTAL SILICON STRUCTURES

摘要

A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.