发明名称 DATA WRITING AND READING METHOD, AND MEMORY CONTROLLER AND MEMORY STORAGE APPARATUS USING THE SAME
摘要 A data writing method for a rewritable non-volatile memory module is provided. The present method includes compressing an original data to generate a first data and determining whether the length of the first data is smaller than a predetermined length. The present method also includes outputting the first data as a compressed data when the length of the first data is not smaller than the predetermined length. The present method further includes generating an ECC code corresponding to the compressed data, generating an ECC frame according to the compressed data and the ECC code, and writing the ECC frame into the rewritable non-volatile memory module. Accordingly, when data corresponding to the original data is read from the rewritable non-volatile memory module, error bits in the data can be corrected and the original data can be restored according to the ECC code.
申请公布号 US2012173955(A1) 申请公布日期 2012.07.05
申请号 US201113071523 申请日期 2011.03.25
申请人 LIANG LI-CHUN;PHISON ELECTRONICS CORP. 发明人 LIANG LI-CHUN
分类号 G11C29/52;G06F11/10 主分类号 G11C29/52
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