| 摘要 |
<p>Disclosed is a chemical mechanical planarization slurry for polishing silicon and copper, comprising abrasive particles, an oxidant, an alkaline polishing rate adjusting agent capable of reacting with the surface of silicon and copper to form a compound readily dissolvable in a carrier. The chemical mechanical planarization slurry disclosed can achieve a relatively high silicon and copper removal rate, regulate the polishing selection ratio of copper to silicon in chemical mechanical polishing, and control the local or overall corrosive effect of the metallic material, substantially free of surface defects, scratches, stains and other residual contaminants on the substrate.</p> |
