GAN BASED LIGHT EMITTING DEVICE WITH EXCELLENT LIGHT EFFICIENCY AND CRYSTAL QUALITY AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A nitride based light emitting device with high luminous efficiency and high crystallinity and a manufacturing method thereof are provided to improve light extraction efficiency by forming an uneven part and a non-continuous metal layer in an N type semiconductor layer growing process to improve a reflection effect. CONSTITUTION: An undoped semiconductor layer(110) is formed on the upper side of a substrate(101). An N type semiconductor layer(120) is formed on the upper side of the undoped semiconductor layer. A light emitting active layer(130) is formed on the upper side of the N type semiconductor layer. A P type semiconductor layer(140) is formed on the upper side of the light emitting active layer. An N-electrode(125) is formed on the exposed part of the N type semiconductor layer.