| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a raw material capable of efficiently producing a silicon-containing thin film at a low temperature of ≤500°C, without using plasma, etc. <P>SOLUTION: By reacting a chlorosilane derivative (3) with the compound M<SP POS="POST">2</SP>Z (4) to produce a hydrosilane derivative expressed by general formula (1'), R<SP POS="POST">1</SP>and R<SP POS="POST">2</SP>are each independently alkyl, and when Z is an isocyanate or isothiocyanate group, M<SP POS="POST">2</SP>is a sodium atom or the like, when Z is an amino group, M<SP POS="POST">2</SP>is H or the like, and when Z is an alkenyl group, M<SP POS="POST">2</SP>is a magnesium halide group, and by using the same as the raw material, the silicon-containing thin film is produced. <P>COPYRIGHT: (C)2012,JPO&INPIT |
