发明名称 METHOD FOR MANUFACTURING A POLYCRYSTALLINE DIELECTRIC LAYER
摘要 A method manufactures a capacitor having polycrystalline dielectric layer between two metallic electrodes. The dielectric layer is formed by a polycrystalline growth of a dielectric metallic oxide on one of the metallic electrodes. At least one polycrystalline growth condition of the dielectric oxide is modified during the formation of the polycrystalline dielectric layer, which results in a variation of the polycrystalline properties of the dielectric oxide within the thickness of said layer.
申请公布号 US2012170170(A1) 申请公布日期 2012.07.05
申请号 US201113338766 申请日期 2011.12.28
申请人 STMICROELECTRONICS (CROLLES 2) SAS 发明人 GROS-JEAN MICKAEL
分类号 H01G4/20;B05D5/12;C23C16/50 主分类号 H01G4/20
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