| 发明名称 |
METHOD TO REDUCE DEPTH DELTA BETWEEN DENSE AND WIDE FEATURES IN DUAL DAMASCENE STRUCTURES |
| 摘要 |
A method of forming a device is disclosed. The method includes providing a substrate prepared with a dielectric layer having first and second regions. The first region comprises wide features and the second region comprises narrow features. A depth delta exists between bottoms of the wide and narrow features. A non-conformal layer is formed on the substrate and it lines the wide and narrow trenches in the first and second regions. The non-conformal layer is removed. Removing the non-conformal layer reduces the depth delta between the bottoms of the wide and narrow features in the first and second region. |
| 申请公布号 |
US2012168957(A1) |
申请公布日期 |
2012.07.05 |
| 申请号 |
US20100981519 |
申请日期 |
2010.12.30 |
| 申请人 |
SRIVASTAVA RAVI PRAKASH;OGUNSOLA OLUWAFEMI O.;CHILD CRAIG;PALLACHALIL MUHAMMED SHAFI KURIKKA VALAPPIL;HICHRI HABIB;ANGYAL MATTHEW;MIYAJIMA HIDESHI;GLOBALFOUNDRIES SINGAPORE PTE. LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION;TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.;INFINEON TECHNOLOGIES NORTH AMERICA CORP.;ADVANCED MICRO DEVICES CORPORATION |
发明人 |
SRIVASTAVA RAVI PRAKASH;OGUNSOLA OLUWAFEMI O.;CHILD CRAIG;PALLACHALIL MUHAMMED SHAFI KURIKKA VALAPPIL;HICHRI HABIB;ANGYAL MATTHEW;MIYAJIMA HIDESHI |
| 分类号 |
H01L23/48;H01L21/28;H01L21/31 |
主分类号 |
H01L23/48 |
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