发明名称 |
PASSIVATION OF ALUMINUM NITRIDE SUBSTRATES |
摘要 |
The present invention provides methods of protecting a surface of an aluminum nitride substrate. The substrate with the protected surface can be stored for a period of time and easily activated to be in a condition ready for thin film growth or other processing. In certain embodiments, the method of protecting the substrate surface comprises forming a passivating layer on at least a portion of the substrate surface by performing a wet etch, which can comprise the use of one or more organic compounds and one or more acids. The invention also provides aluminum nitride substrates having passivated surfaces. |
申请公布号 |
US2012168772(A1) |
申请公布日期 |
2012.07.05 |
申请号 |
US201213416182 |
申请日期 |
2012.03.09 |
申请人 |
COLLAZO RAMON R.;SITAR ZLATKO;DALMAU RAFAEL;NORTH CAROLINA STATE UNIVERSITY |
发明人 |
COLLAZO RAMON R.;SITAR ZLATKO;DALMAU RAFAEL |
分类号 |
H01L29/20 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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