| 摘要 |
<p>The purpose of the present invention is to provide a semiconductor device, whereby it becomes possible to reduce a leak current, to reduce an on-resistance, and to achieve high-speed operation upon switching. The present invention is a semiconductor device which is equipped with a cell array comprising an array of regular cells (6) and contact cells (7) arranged in places in the array of the regular cells, and which comprises an n+-type semiconductor substrate (1), an n--type semiconductor layer (2) formed on the n+-type semiconductor substrate (1), a p-type embedded layer (5) embedded in the n--type semiconductor layer (2), and a p-type surface layer (4) formed in the center part of each of the regular cells (6) and the contact cells (7), wherein the p-type embedded layer (5) is in contact with the p-type surface layer (4) in each of the contact cells (7), the semiconductor device additionally comprises a p+-type contact layer (8) which is formed on the p-type surface layer (4) in each of the contact cells (7) and an anode electrode (3) which is shotkey-jointed onto the n--type semiconductor layer (2) and is ohmically contacted with the p+-type contact layer (8), and the p-type embedded layer (5) and the anode electrode (3) are connected to each other through the p-type surface layer (4) and the p+-type contact layer (8).</p> |
