PURPOSE: A chemical vapor depositing apparatus for growing a gallium nitride-based LED thin film is provided to improve the quality of a thin film on a substrate by minimizing thermal decomposition of an organic metal compound in a nozzle. CONSTITUTION: A process tube(100) includes an inner tube(102) and an outer tube(104). The inner tube receives a boat(200) for loading a plurality of substrates. A heater assembly(110) surrounds the process tube. A seal cap(220) opens and closes an opening unit of the process tube by a driving unit(230). A first nozzle unit(300) sprays source gas and reaction gas to the substrate loaded on the boat.
