| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of reducing a circuit area. <P>SOLUTION: A semiconductor memory device 1 includes: a memory cell array 10; a plurality of word lines connected to the memory cell array 10; a generating circuit 12 generating a plurality of voltages required to operate the memory cell array 10; a plurality of selecting circuits 15 being individually connected to the plurality of word lines and selecting a voltage, which is applied to the plurality of word lines, from the plurality of voltages; and a transfer section 16 individually transferring a plurality of control data for selecting the voltage to the plurality of selecting circuits 15. The transfer section 16 includes a plurality of transfer circuits 17 sequentially shifting an enable signal. The plurality of transfer circuits 17 includes a plurality of latch circuits LAT individually holding the plurality of control data based on the enable signal having been shifted. <P>COPYRIGHT: (C)2012,JPO&INPIT |
