| 摘要 |
A thin film transistor (TFT) including a gate, a gate insulator, an oxide semiconductor channel layer, a source, and a drain is provided. The gate insulator covers the gate, while the oxide semiconductor channel layer is configured on the gate insulator and located above the gate. The oxide semiconductor channel layer includes a first sub-layer and a second sub-layer located on the first sub-layer. An oxygen content of the first sub-layer is lower than an oxygen content of the second sub-layer. The source and the drain are configured on a portion of the second sub-layer. In addition, a fabricating method of the above-mentioned TFT is also provided.
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